Terahertz tunnel ionization of DX-centers in AlGaAs : Te

Two-Dimensional Numerical Simulation of Fermi- Level Pinning Phenomena Due to DX Centers in AlGaAs/GaAs HEMT’s

Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT’s are analyzed using two-dimensional numerical simulation based on a drift-diffusion model. A DX center model is introduced assuming Fermi-Dirac statistics for ionized donor density with the aluminum mole fraction dependence of the deep-donor energy level. The calculated results reveal that the decrease in transconductance of A...

Phonon-pumped terahertz gain in n-type GaAs/AlGaAs superlattices

Terahertz absorption in AlGaAs films and detection using heterojunctions

HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors using AlGaAs as both the emitter and the barrier material with different Al fractions for the two layers are demonstrated. The extension of the HEIWIP concept to wavelengths longer than 110 lm in the GaAs/AlGaAs system requires the use of AlGaAs as the emitter material to reduce the barrier height. The p-type dopi...

Ionization Time and Exit Momentum in Strong-Field Tunnel Ionization.

Tunnel ionization belongs to the fundamental processes of atomic physics. The so-called two-step model, which describes the ionization as instantaneous tunneling at the electric field maximum and classical motion afterwards with zero exit momentum, is commonly employed to describe tunnel ionization in adiabatic regimes. In this contribution, we show by solving numerically the time-dependent Sch...

DX centers in AlAs and GaAs-AlAs selectively doped superlattices

Dx centers have been investigated using deep level transient